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1 July 1990 Characterization of soft x-ray damage in charge-coupled devices
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Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19439
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States
Abstract
The paper presents the use of deep level transient spectroscopy to characterize trapping centers in CCD imagers. A discussion is presented regarding the effects of UV illumination and elevated temperature annealing in a hydrogen-rich environment. Two trapping centers are described, and the annealing experiments suggest techniques for extending CCD lifetimes.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nigel M. Allinson, D. W.E. Allsopp, B. G. Magorrian, and J. Alan Quayle "Characterization of soft x-ray damage in charge-coupled devices", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19439
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