1 July 1990 Effects of transistor geometry on CCD output sensitivity
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Abstract
This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. E. Kim, Morley M. Blouke, Denis L. Heidtmann, "Effects of transistor geometry on CCD output sensitivity", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); doi: 10.1117/12.19440; https://doi.org/10.1117/12.19440
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