Diversity of split Ga vacancies in β-Ga2O3

F. Tuomisto; I. Zhelezova; I. Makkonen

doi:10.1117/12.2664997

16 March 2023 Diversity of split Ga vacancies in β-Ga₂O₃

F. Tuomisto, I. Zhelezova, I. Makkonen

Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 1242201 (2023) https://doi.org/10.1117/12.2664997
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Positron annihilation spectroscopy has been applied to study the vacancy-type defects in a wide range of β-Ga₂O₃ bulk crystals and thin films. The experimental data show that all studied samples contain high concentrations of Ga vacancies in a split vacancy configuration. These split Ga vacancies are observed also with other experimental techniques, and theoretical calculations predict that their formation energies are lower than those of other vacancy configurations. The exact structure of the split Ga vacancies appears to vary across samples.

Conference Presentation

Citation Download Citation

F. Tuomisto, I. Zhelezova, and I. Makkonen "Diversity of split Ga vacancies in β-Ga₂O₃", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 1242201 (16 March 2023); https://doi.org/10.1117/12.2664997

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available