Graphene oxide for enhanced self-phase modulation in silicon nitride waveguides

Yuning Zhang; Jiayang Wu; Yunyi Yang; Yang Qu; Houssein El Dirani; Romain Crochemore; Corrado Sciancalepore; Pierre Demongodin; Christian Grillet; Christelle Monat; Baohua Jia; David Moss

doi:10.1117/12.2648005

17 March 2023 Graphene oxide for enhanced self-phase modulation in silicon nitride waveguides

Yuning Zhang, Jiayang Wu, Yunyi Yang, Yang Qu, Houssein El Dirani, Romain Crochemore, Corrado Sciancalepore, Pierre Demongodin, Christian Grillet, Christelle Monat, Baohua Jia, David Moss

Author Affiliations +

Proceedings Volume 12424, Integrated Optics: Devices, Materials, and Technologies XXVII; 124240O (2023) https://doi.org/10.1117/12.2648005
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Self-phase modulation (SPM) is an important third-order nonlinear optical process that has been widely used in many applications, such as broadband optical sources, optical diodes, optical spectroscopy, pulse compression, and many others. The ability to realize SPM based on-chip integrated photonic devices will reap attractive benefits of compact footprint, high stability, high scalability, and low-cost mass production. Here, we experimentally investigate enhanced SPM in silicon nitride (Si3N4) waveguides by integrating with 2D graphene oxide (GO) films. The on-chip integration of GO films is achieved on Si3N4 waveguides through a solution-based, transfer-free, layer-by-layer coating method with precise control of the film thickness. We use both picosecond and femtosecond optical pulses to perform detailed SPM measurements. Owing to the high Kerr nonlinearity of GO, the GO-coated waveguides show significantly improved spectral broadening for both the picosecond and femtosecond optical pulses compared to the uncoated waveguide, achieving a broadening factor of up to ~3.4 for a device with 2 layers of GO. Based on the experimental results which show good agreement with theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of up to 18.4 and a Kerr coefficient (n2) of GO that is about 5 orders of magnitude higher than Si3N4. These results reveal the effectiveness of 2D GO films to improve the nonlinear performance of Si3N4 waveguides.

Conference Presentation

Citation Download Citation

Yuning Zhang, Jiayang Wu, Yunyi Yang, Yang Qu, Houssein El Dirani, Romain Crochemore, Corrado Sciancalepore, Pierre Demongodin, Christian Grillet, Christelle Monat, Baohua Jia, and David Moss "Graphene oxide for enhanced self-phase modulation in silicon nitride waveguides", Proc. SPIE 12424, Integrated Optics: Devices, Materials, and Technologies XXVII, 124240O (17 March 2023); https://doi.org/10.1117/12.2648005

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available