On uniform avalanche in III-nitrides and its application

Bhawani Shankar; Ke Zeng; Srabanti Chowdhury

doi:10.1117/12.2649674

15 March 2023 On uniform avalanche in III-nitrides and its application

Bhawani Shankar, Ke Zeng, Srabanti Chowdhury

Author Affiliations +

Proceedings Volume 12430, Quantum Sensing and Nano Electronics and Photonics XIX; 1243002 (2023) https://doi.org/10.1117/12.2649674
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

The application space for GaN devices is expanding. During our study of Vertical GaN device technology for power electronics, one of the phenomenal advancements was achieving a high-voltage, robust avalanche in p-n diodes. A high-quality p-n junction, although superficially simple, can be fundamentally limited in offering a uniform avalanche. Uniformity of avalanche is a critical parameter that is often overlooked during device designs and other metrics.

Conference Presentation

Citation Download Citation

Bhawani Shankar, Ke Zeng, and Srabanti Chowdhury "On uniform avalanche in III-nitrides and its application", Proc. SPIE 12430, Quantum Sensing and Nano Electronics and Photonics XIX, 1243002 (15 March 2023); https://doi.org/10.1117/12.2649674

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