Depletion-mode and inversion-mode dual-laser nonlinear optoelectronic tunneling junction microwave CMOS VCSEL for integrated system-on-chip lasing RF ASIC, high-power pulsed and CW lasers: performance advantages over traditional VCSEL

James N. Pan

doi:10.1117/12.2643281

6 April 2023 Depletion-mode and inversion-mode dual-laser nonlinear optoelectronic tunneling junction microwave CMOS VCSEL for integrated system-on-chip lasing RF ASIC, high-power pulsed and CW lasers: performance advantages over traditional VCSEL

James N. Pan

Author Affiliations +

Proceedings Volume 12439, Vertical-Cavity Surface-Emitting Lasers XXVII; 1243904 (2023) https://doi.org/10.1117/12.2643281
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Negative resistance millimeter wave semiconductor devices (including Tunnel, Gunn, IMPATT and, BARITT diodes) can generate high frequency microwave signals approaching the terahertz infrared regime for commercial telecommunications and military applications. These devices can be included in the drain or source regions of a MOSFET as one integral device to form Millimeter Wave to Terahertz Optoelectronic CMOS Transistors. Traditionally, VCSEL is not part of the CMOS transistors. In this paper, we will discuss CMOS VCSEL: a Vertical Cavity Surface Emitting Laser in the CMOS drain region, and photon sensors or avalanche photo diode in the CMOS drain / well regions. CMOS, VCSEL, and photon sensors are fabricated as one integral transistor. Millimeter wave generating diodes can also be fabricated in the drain region of the VCSEL MOSFET. We will discuss inversion mode and depletion mode CMOS VCSEL transistors.

Conference Presentation

Citation Download Citation

James N. Pan "Depletion-mode and inversion-mode dual-laser nonlinear optoelectronic tunneling junction microwave CMOS VCSEL for integrated system-on-chip lasing RF ASIC, high-power pulsed and CW lasers: performance advantages over traditional VCSEL", Proc. SPIE 12439, Vertical-Cavity Surface-Emitting Lasers XXVII, 1243904 (6 April 2023); https://doi.org/10.1117/12.2643281

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