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The aging behavior of Quantum Wells (QW) in UVB-emitting devices is analyzed. In addition to the standard lifetime tests, we measured the non-equilibrium carrier lifetime in the QW by time-resolved photoluminescence (PL) and performed spatially resolved PL measurements. In this way, we distinguish the different contributions that lead to a decrease in the emission power of the device. We show that the aging-induced increase of spatial inhomogeneities of the PL also affects the transient PL behavior.
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Jens W. Tomm, Jan Ruschel, Hyun Kyong Cho, Sven Einfeldt, "Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters," Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 1244008 (15 March 2023); https://doi.org/10.1117/12.2646579