Speculation on the EUV photoresist behavior at different dose and pitch

Suk-Koo Hong; Young Joo Choi; Eunseol Kim; Sang Hyun Je; Jun Soo Kim; Jaewoo Nam; Su Min Park

doi:10.1117/12.2658295

28 April 2023 Speculation on the EUV photoresist behavior at different dose and pitch

Suk-Koo Hong, Young Joo Choi, Eunseol Kim, Sang Hyun Je, Jun Soo Kim, Jaewoo Nam, Su Min Park

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 124940T (2023) https://doi.org/10.1117/12.2658295
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Strong challenge on EUV photoresist includes overcoming the stochastic effect caused by the lack of photons. At the different dose range, the relationship of LCDU and dose moves differently. This ‘breaking point’ in the relationship of LCDU and dose is measured at different pitches with photoresists and masks with different uniformity. Smaller pitch patterning requires more dose, whereas photoresist and mask does not affect the ‘breaking point.’ Combining these speculations show the limitation of the EUV at the low dose process, which is critical for high volume manufacturing.

Conference Presentation

Citation Download Citation

Suk-Koo Hong, Young Joo Choi, Eunseol Kim, Sang Hyun Je, Jun Soo Kim, Jaewoo Nam, and Su Min Park "Speculation on the EUV photoresist behavior at different dose and pitch", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940T (28 April 2023); https://doi.org/10.1117/12.2658295

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