Poster + Paper
28 April 2023 BEOL N2: M2 through SAxP process from MP21 to MP26: 193i SAQP vs EUV SADP
Author Affiliations +
Conference Poster
Abstract
193i SAQP has allowed industry for continued BEOL metal pitch scaling, but as metal pitches become even tighter EUV SADP becomes an interesting alternative. In this context we have explored within our dual damascene 3ML test vehicles how the EUV SADP process compares to 193i SAQP for printing MP21 M2 lines. Our first EUV SADP results already show a better wafer CDU compared to our POR 193i SAQP process.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yannick Hermans, Chen Wu, Nunzio Buccheri, Filip Schleicher, Janko Versluijs, Daniel Montero, Bappaditya Dey, Patrick Wong, Paulina Rincon-Delgadillo, Seongho Park, Zsolt Tokei, Philippe Leray, and Sandip Halder "BEOL N2: M2 through SAxP process from MP21 to MP26: 193i SAQP vs EUV SADP", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 1249414 (28 April 2023); https://doi.org/10.1117/12.2657917
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KEYWORDS
Optical lithography

Semiconducting wafers

Back end of line

Lithography

Extreme ultraviolet lithography

Resistance

Critical dimension metrology

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