300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials

A. Moussa; J. Bogdanowicz; B. Groven; P. Morin; M. Beggiato; M. Saib; G. Santoro; Y. Abramovitz; K. Houtchens; S. Ben Nissim; N. Meir; J. Hung; A. Urbanowicz; R. Koret; I. Turovets; G. F. Lorusso; A.-L. Charley

doi:10.1117/12.2657968

27 April 2023 300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials

A. Moussa, J. Bogdanowicz, B. Groven, P. Morin, M. Beggiato, M. Saib, G. Santoro, Y. Abramovitz, K. Houtchens, S. Ben Nissim, N. Meir, J. Hung, A. Urbanowicz, R. Koret, I. Turovets, G. F. Lorusso, A.-L. Charley

Author Affiliations +

Proceedings Volume 12496, Metrology, Inspection, and Process Control XXXVII; 124961X (2023) https://doi.org/10.1117/12.2657968
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Devices based on 2D material channels require high-quality monolayer material. However, although the value of many laboratory metrology techniques has been demonstrated on small coupons, the development of inline characterization of 2D material layers grown on full 300mm wafers is still missing. In this work, we evaluate and combine different inline metrologies to characterize at wafer level the thickness and the morphology of tungsten disulfide (WS₂) layers grown on full 300mm wafers. Combining the results from the different techniques allows us to reveal the morphology and the thickness of the WS₂ layers as well as their uniformity across the 300 mm wafers for different growth conditions.

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A. Moussa, J. Bogdanowicz, B. Groven, P. Morin, M. Beggiato, M. Saib, G. Santoro, Y. Abramovitz, K. Houtchens, S. Ben Nissim, N. Meir, J. Hung, A. Urbanowicz, R. Koret, I. Turovets, G. F. Lorusso, and A.-L. Charley "300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124961X (27 April 2023); https://doi.org/10.1117/12.2657968

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