A novel formulated developer for negative-tone imaging with EUV exposure to improve chemical stochastic

Keiyu Ou; Naohiro Tango; Nishiki Fujimaki; Kazuhiro Marumo; Nobuhiro Hiura; Satomi Takahashi; Toru Fujimori

doi:10.1117/12.2657421

30 April 2023 A novel formulated developer for negative-tone imaging with EUV exposure to improve chemical stochastic

Keiyu Ou, Naohiro Tango, Nishiki Fujimaki, Kazuhiro Marumo, Nobuhiro Hiura, Satomi Takahashi, Toru Fujimori

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124980D (2023) https://doi.org/10.1117/12.2657421
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

In 2019, finally, extreme ultraviolet (EUV) lithography has been applied to high volume manufacturing (HVM). However, the performance of EUV resist materials are still not enough for the expected HVM requirements, even by using the latest qualifying EUV resist materials. The critical issues are the stochastic issues, which will become ‘defectivity’. The analyzing summary of the stochastic factors in EUV lithography was reported, which described 2 (two) major stochastic issues, which are ‘Photon stochastic’ and ‘Chemical stochastic’. In the past, speaking of the stochastic issue was basically considered from low photon number from EUV light source, which means ‘photon shot noise’. It was still critical concerning point, even with recent progress on source power improvement. However, the stochastic issue is not only from them but also from EUV materials and processes, called ‘Chemical stochastic’. The ‘Chemical stochastic’ means caused from resist materials and processes for lithography, materials uniformity in the film, reactive uniformity in the film, and dissolving behavior with the developer. In this paper, we will focus on ‘Chemical stochastic’ improvement, especially, the dissolving behavior by using negative-tone imaging (NTI, using organic solvent-based developer) with EUV exposure (EUV-NTI). EUV-NTI had a potential for improving ‘Chemical stochastic’ because of their properties, which were low swelling and smooth dissolving behavior. However, the pattern collapse was easily observed for preparing fine patterns with the standard developer. Newly proposed novel formulated organic solvent-based developer will be expected to improve the patter collapse issue and ‘Chemical stochastic’. Lithographic performance will also be reported.

Conference Presentation

Citation Download Citation

Keiyu Ou, Naohiro Tango, Nishiki Fujimaki, Kazuhiro Marumo, Nobuhiro Hiura, Satomi Takahashi, and Toru Fujimori "A novel formulated developer for negative-tone imaging with EUV exposure to improve chemical stochastic", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124980D (30 April 2023); https://doi.org/10.1117/12.2657421

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