Today, the trend line in cooled infrared detector manufacturing is to go towards very small pixel pitches and to operate at high temperatures. To take full advantage of this pitch reduction, the modulation transfer function (MTF) has to be correctly measured to optimize the development of HgCdTe p/n planar diodes, where the MTF is degraded due to the large diffusion length of minority carriers. Furthermore, as the pitch decreases close to the wavelength, the measurement of its MTF becomes difficult using traditional optical projection methods, which are intrinsically limited by diffraction. In order to assess this MTF, an original characterization method is therefore investigated at LETI, involving an electron beam instead of an optical beam to excite the pixels: the electron beam induced current (EBIC). This method introduces a low MTF degradation (estimated by Monte Carlo simulations) on the measurements that can be neglected, thus giving access to a direct estimation of the pixel MTF, with no need for deconvolution. This work shows EBIC measurements carried out on HgCdTe planar diodes with small pixel pitches: 7.5μm and 5μm. The resulting MTF is compared with MTF computed by finite-element modeling using an electronic and photonic excitation.
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