High-performance graphene mid-infrared photogated diode with interfacial layer for infrared image sensor

Masaaki Shimatani; Shoichiro Fukushima; Shinpei Ogawa

doi:10.1117/12.2663031

13 June 2023 High-performance graphene mid-infrared photogated diode with interfacial layer for infrared image sensor

Masaaki Shimatani, Shoichiro Fukushima, Shinpei Ogawa

Author Affiliations +

Proceedings Volume 12534, Infrared Technology and Applications XLIX; 125341V (2023) https://doi.org/10.1117/12.2663031
Event: SPIE Defense + Commercial Sensing, 2023, Orlando, Florida, United States

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Abstract

Graphene/InSb heterojunction mid-infrared photodiodes for infrared image sensors exhibit high responsivity, low noise, and excellent detection performance. However, the performance of each pixel varies owing to the instability of the graphene/InSb interface state. In this study, the performance variation was addressed by inserting an interfacial layer at the graphene/InSb interface. A few-nanometer-thick HfO2 interfacial layer was inserted at the graphene/InSb interface. Compared to devices without an interfacial layer, those with an interfacial layer exhibited greatly improved minimum noise equivalent temperature difference (NETD) and pixel-by-pixel NETD variation. This was due to the stabilization of the InSb surface and increased photocurrent caused by photoswitching, which significantly changed the Fermi level of the graphene. The insertion of the HfO₂ interfacial layer improved the standard deviation to less than 1/30. Thus, inserting an interfacial layer at the graphene/InSb interface is expected to facilitate the development of high-performance infrared image sensors with low variability.

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Masaaki Shimatani, Shoichiro Fukushima, and Shinpei Ogawa "High-performance graphene mid-infrared photogated diode with interfacial layer for infrared image sensor", Proc. SPIE 12534, Infrared Technology and Applications XLIX, 125341V (13 June 2023); https://doi.org/10.1117/12.2663031

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