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1 June 1990 Advanced 5x reticle inspection technologies for ULSI devices
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Abstract
This paper describes new database inspection technologies for pattern inspection of ULSI 5x reticles. An improved inspection system architecture which addresses three important factors: sensitivity, data volume, and inspection throughput is studied. To improve defect detection sensitivity, the high resolution optical images which are captured by the inspection system are enhanced using programmable finite impulse response filters. New defect detection algorithms are utilized. Increased resolution is also incorporated in the database images. Higher resolution database images are especially effective in improving sensitivity and reducing false detections in small pattern geometry. The database format has also been optimized to minimize the disk storage requirements and network file transfer time. The new database generator is capable of expanding compacted data and creating grey level bit mapped images in real time. Experimental results are reported using actual 5x reticle inspection results and simulated reticle data for ULSI chips, such as 64Mbit DRAM and l6Mbit SRAM. The results indicate that 5x reticles can be inspected for O.3im defects with an acceptable level of false detections and throughput that is comparable to eleciron beam write times.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susumu Takeuchi, David A. Joseph, Miyoshi Yoshida, Koichi Moriizumi, Donald Parker, and Yaichiro Watakabe "Advanced 5x reticle inspection technologies for ULSI devices", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20046
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