1 June 1990 Defect generation in dry-develop lithography: assessment through electrical characterization
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This paper preseni3 an experimental evaluation of defect generation and device damage in dry develop lithography a compared to 3tandard -wet develop- lithography. A 3tandard g-line process and the DESIRE® process were compared. Defect generation wa evaluated by u3ing electrical te3t structure3 to measure open and 3hort defects on aluminum and polysilicon. The short defect densitie3 were very aimilar for both lithographie, while the open den3ities were larger for dry developed wafers. Thi3 i. attributed to the ue of a negative tone resist. Device damage wa aJ3e33ed by processing and characterizing capacitors and active devices. No device damage inherent to the use of plasmas for lithography was identified.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George R. Misium, George R. Misium, Thomas R. Seha, Thomas R. Seha, } "Defect generation in dry-develop lithography: assessment through electrical characterization", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20030; https://doi.org/10.1117/12.20030


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