Novel method for the prediction of process sensitivity in photolithography

Michael P. C. Watts; Stephen S. Williams

doi:10.1117/12.20061

1 June 1990 Novel method for the prediction of process sensitivity in photolithography

Michael P. C. Watts, Stephen S. Williams

Proceedings Volume 1261, Integrated Circuit Metrology, Inspection, and Process Control IV; (1990) https://doi.org/10.1117/12.20061
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Accurate technology projections are the key to any attempt to identify future product needs and technical road blocks. For coat and develop, the goal is to be able to project resist thickness and develop uniformity control requirements as device geometries shrink. In addition, it would be desirable to project the temperature and exhaust control required to achieve a specific resist thickness control. This paper will describe a new procedure for technology projections at coat and develop. It is based on a hierarchical analysis of variance combined with simple physical models of resist properties. Traditionally, people" have used an experimental approach to identify key variables. In these experimental approaches, the process is treated as a "black box" to be investigated using statistically designed experiments. These data tell the process engineer a lot about the current process. They do not help with technology projections. To project the future, some sort of model is needed. The model described here uses a "top down" approach that starts from the desired line width control expressed in statistical terms.

Citation Download Citation

Michael P. C. Watts and Stephen S. Williams "Novel method for the prediction of process sensitivity in photolithography", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20061

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