1 June 1990 Quantitative linewidth measurement using in-situ differential SEM techniques
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Abstract
Results are reported on the use of the in-situ differential scanning electron microscope in precision micro-metrology of submicron features. It is shown that the technique is capable of providing remarkably stable linescans across etched silicon patterns partially covered with silicon dioxide on the surface. Results are also presented on the metrology of photo-resist, showing relative signal stability even in presence of charging effects. An important ability of the technique, namely its inherent capability to effect an ob5ectively defined alignment of the samples, is extensively utilized in this regard.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albert Sicignano and Mehdi Vaez-Iravani "Quantitative linewidth measurement using in-situ differential SEM techniques", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20077; https://doi.org/10.1117/12.20077
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