Results are reported on the use of the in-situ differential scanning
electron microscope in precision micro-metrology of submicron
features. It is shown that the technique is capable of providing
remarkably stable linescans across etched silicon patterns partially
covered with silicon dioxide on the surface. Results are also
presented on the metrology of photo-resist, showing relative signal
stability even in presence of charging effects. An important ability
of the technique, namely its inherent capability to effect an
ob5ectively defined alignment of the samples, is extensively utilized
in this regard.
Albert Sicignano
and Mehdi Vaez-Iravani
"Quantitative linewidth measurement using in-situ differential SEM techniques", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20077; https://doi.org/10.1117/12.20077
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Albert Sicignano, Mehdi Vaez-Iravani, "Quantitative linewidth measurement using in-situ differential SEM techniques," Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990);