ANR photoresist process optimization at 248 nm

Christophe Pierrat; Francoise Vinet; Thierry Mourier; James W. Thackeray

doi:10.1117/12.20123

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1 June 1990 ANR photoresist process optimization at 248 nm

Christophe Pierrat, Francoise Vinet, Thierry Mourier, James W. Thackeray

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Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20123
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The purpose of this article is to propose a residue-free process using ANR resists specifically designed for deep UV lithography. The influence of development steps, process conditions and resist formulation on residues were studied. An optimized process point with a new resist formulation is proposed. Using this residue-free process point, very high resolution was achieved for deep UV and e-beam lithography. Moreover, the temporal effects on the coated wafers were investigated.

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Christophe Pierrat, Francoise Vinet, Thierry Mourier, and James W. Thackeray "ANR photoresist process optimization at 248 nm", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20123

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