ANR photoresist process optimization at 248 nm

Christophe Pierrat; Francoise Vinet; Thierry Mourier; James W. Thackeray

doi:10.1117/12.20123

1 June 1990 ANR photoresist process optimization at 248 nm

Christophe Pierrat, Francoise Vinet, Thierry Mourier, James W. Thackeray

Author Affiliations +

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20123
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The purpose of this article is to propose a residue-free process using ANR resists specifically designed for deep UV lithography. The influence of development steps, process conditions and resist formulation on residues were studied. An optimized process point with a new resist formulation is proposed. Using this residue-free process point, very high resolution was achieved for deep UV and e-beam lithography. Moreover, the temporal effects on the coated wafers were investigated.

Citation Download Citation

Christophe Pierrat, Christophe Pierrat, Francoise Vinet, Francoise Vinet, Thierry Mourier, Thierry Mourier, James W. Thackeray, James W. Thackeray, "ANR photoresist process optimization at 248 nm", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20123; https://doi.org/10.1117/12.20123

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