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1 June 1990ANR photoresist process optimization at 248 nm
The purpose of this article is to propose a residue-free process using ANR resists specifically
designed for deep UV lithography. The influence of development steps, process conditions and resist
formulation on residues were studied. An optimized process point with a new resist formulation is
proposed. Using this residue-free process point, very high resolution was achieved for deep UV and
e-beam lithography. Moreover, the temporal effects on the coated wafers were investigated.
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Christophe Pierrat, Francoise Vinet, Thierry Mourier, James W. Thackeray, "ANR photoresist process optimization at 248 nm," Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20123