1 June 1990 Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma
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Abstract
We investigated dry-develop resist as the top layer in a bilayer system. The resist consisted of polyacetylene with silicon atoms, PTMDSO (poly 4,4,7,74etramethyl-4,7-disila- 2-octyne) as a base polymer, and a phenyl azide as a photosensitive addition agent. 0.30 pm line and space negative patterns were resolved, when the resist exposed using a KrF excimer laser stepper system was developed in the down stream of 02/CF4 plasma. The sensitivity was around 100 mJ/cm2 and the oxygen plasma resistance was about 50 times greater than that of novolak resist.
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Takushi Motoyama, Satoru Mihara, Naomichi Abe, "Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20096; https://doi.org/10.1117/12.20096
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