1 June 1990 Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography
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Abstract
Aliphatic 2-diazoketones of various structural types were synthesized then screened as photoactive components of deep U V resists Several of the materials were readily photolyzed upon deep U.V. irradiation but also exhibited reasonable thermal stability. Representative resists incorporating these materials gave positive tone with metal ion containing developers and negative tone with metal ion free developers. Resist sensitivity was dependent on the frequency spectrum of the exposing deep U.V. light.
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George Schwartzkopf, George Schwartzkopf, Kathleen B. Gabriel, Kathleen B. Gabriel, John B. Covington, John B. Covington, } "Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20100; https://doi.org/10.1117/12.20100
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