1 June 1990 Evaluation of resist materials for KrF excimer laser lithography
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Good resist patterns are not obtained for KrF excimer laser lithography using conventional naphtoquinonediazide novalac resin deep UV resist because of the strong photoabsorption of the resist at 248nm wavelength. In this paper we report the development of new high transparency positive resists, STAR-P and MASTER, using poly(styrene-co-maleic acid half ester) base polymer and sensitizers. These resists have excellent transmittance as high as 70% and photobleaching characteristics resulting in resolution of 0.45 micron with excellent pattern profiles with greater than 80 degree wall angle. These resists also have excellent dry etch resistance comparable to conventional novolac resist during silicon dioxide etch. These resists are good candidates for development and manufacturing of sub-half micron VLSI devices.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry H. Fujimoto, Masaru Sasago, Yoshiyuki Tani, Masayuki Endo, Noboru Nomura, "Evaluation of resist materials for KrF excimer laser lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20126; https://doi.org/10.1117/12.20126

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