Paper
1 June 1990 High-resolution positive photoresists: novolac molecular weight and molecular weight distribution effects
Anthony Zampini, Pamela Turci, George J. Cernigliaro, Harold F. Sandford, Gary J. Swanson, Catherine C. Meister, Roger F. Sinta
Author Affiliations +
Abstract
The roles of polymer molecular weight, molecular weight distribution and chemical composition on the lithographic and thermal performance of positive photoresists were investigated. With the exception of a separately prepared alternating block copolymer, the five novolaks studied resulted from successive solvent fractionation of one original mixed cresol polymer to yield a range of molecular weights from 1000 to 29,000 weight average molecular weight (Mw) and polydispersities ranging from 1.9 to 10.1. The alternating block copolymer, prepared by formation of low molecular weight oligomers which were then joined, is nearly identical in Mw and M to one of the fractionated polymers. Thus, similar polymers prepared by different techniques could be compared. Photoresists made from these polymers were formulated to nearly constant total absorbance at G line using a single photoactive compound (PAC) at constant PAC-to-polymer ratio in all resists. The PAC is a commonly employed 0 linesensitive diazoquinone, with more than half of the ballast structures containing four diazonaphthoquinone groups. Lithographic response for each resist was normalized to constant unexposed film thickness loss (UFTL) of approximately 1 1OA/min by varying developer normality. Responses evaluated include photospeed, resolution, sidewall profile, exposure latitude, linearity, and thermal flow temperature.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Zampini, Pamela Turci, George J. Cernigliaro, Harold F. Sandford, Gary J. Swanson, Catherine C. Meister, and Roger F. Sinta "High-resolution positive photoresists: novolac molecular weight and molecular weight distribution effects", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20105
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Lithography

Photoresist materials

Photoresist developing

Chlorine

Picture Archiving and Communication System

Manganese

Back to Top