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1 June 1990 Highly etch resistant, negative resist for deep-UV and electron beam lithography
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I lighly sensitive resists have been developed from a combination of silsesquioxanes, acid photogenerators, and phenolic resins. The resist forms negative images and is developable with aqueous base. Both electron beam and deep-uv optical sensitivity was observed. The films displayed exceptionally high oxygen reactive ion etch resistance. Bilayer systems were developed with this resist as the imaging layer with either polyimide or hard baked novolac as the planarizing layer. Improved optical resists for single layer application have been obtained by using poly(4-hydroxystyrene) derivatives as the matrix resin.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dennis R. McKean, Nicholas J. Clecak, and Lester A. Pederson Sr. "Highly etch resistant, negative resist for deep-UV and electron beam lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990);

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