1 June 1990 Highly sensitive x-ray and electron-beam resists using chemical amplification
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Abstract
Highly sensitive resist materials are one of the prerequisites for the economic viability of X- ray and E -beam lithography. The principle of chemical anzphfication coupled with the three - component system (3CS) concept leads the way to the design of highly sensitive, yet as the same time process stable materials which fulfill the requirements of modem semiconductor patterning methods. Two experimental 3CS resist systems using chemical amplification, the positive -tone resist RAY- PF and and the negative - tone resist RAZ PNJJ4, will be presented, and their suitability for X- ray and E - beam application exa,nined.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph R. Dammel, Ralph R. Dammel, Charlet R. Lindley, Charlet R. Lindley, Georg Pawlowski, Georg Pawlowski, Ude Scheunemann, Ude Scheunemann, Juergen Theis, Juergen Theis, } "Highly sensitive x-ray and electron-beam resists using chemical amplification", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20134; https://doi.org/10.1117/12.20134
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