1 June 1990 I-line photolithography: an investigation of resist bleachability and process performance
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Abstract
The present work presents an investigation of the characteristics of a broad band capability photoresist in terms of photo-active compound (PAC) bleachability and process performances. The difference in performance on exposure to 436 and 365 nm wavelengths of a commercially available photoresist, Olin Hunt H1PR-6512, has been evaluated as a function of some typical lithographic parameters by using FT-IR spectroscopy and actinometry. This analysis contributed to the development of a submicron I-line process, which in conclusion is shown in a production environment application.
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Giorgio A. L. M. Degiorgis, Patrizia Pateri, Alberto Pilenga, Rodney J. Hurditch, Bernard T. Beauchemin, Edward A. Fitzgerald, "I-line photolithography: an investigation of resist bleachability and process performance", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20129; https://doi.org/10.1117/12.20129
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