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1 June 1990 Modified polyhydroxystyrenes as matrix resins for dissolution inhibition type photoresists
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It is generally accepted that the production of shrink versions of the 16 MB DRAM and the 64 MB DRAM generations will be patterned using deep UV radiation. This provides a new challenge to the photoresist suppliers, as the standard photoresist formulations are not suitable for this technology, mainly because the presently used novolak resins are highly opaque in the 200 - 300 nm region. This is especially true for the 248 nm wavelength of KrF eximer lasers. Poly 4- hydroxystyrene [PHS] has several advantages in transmission and thermal stability; however, its dissolution rate in commercial grade developers is unacceptably high. We report some recent results on modified, alkyl-substituted PHS derivatives. These polymers combine reduced alkaline solubiity with adequate optical and thermal properties, making them acceptable for future deep UV based production processes. Selected data of these new (co)polymers are discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georg Pawlowski, Thomas P. Sauer, Ralph R. Dammel, Douglas J. Gordon, William D. Hinsberg, Dennis R. McKean, Charlet R. Lindley, Hans-Joachim Merrem, Heinz Roeschert, Richard Vicari, and C. Grant Willson "Modified polyhydroxystyrenes as matrix resins for dissolution inhibition type photoresists", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990);

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