Paper
1 June 1990 Novolac design for high-resolution positive photoresist (III): a selection principle of phenolic compounds for novolac resins
Makoto Hanabata, Akihiro Furuta
Author Affiliations +
Abstract
The relationship between resist performance and the kinds of phenolic compounds for novolak resins was investigated from the standpoint of the image formation process. Dissolution rates were measured on photoresists containing novolak resins made from various phenolic compounds including phenol,cresol,ethylphenol,butylphenol,and their copolymers. It was fo.und that there are suitable combinations of phenolic compounds to exhibit high resist performance. On the basis of the experimental results,we discuss the effect of the kinds of phenolic compounds on the dissolution characteristics and the structure of novolac resins. Finally,we propose a selection principle of phenolic compounds for novolak resins useful to design high performance positive photoresists. 1.lntroduction
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Hanabata and Akihiro Furuta "Novolac design for high-resolution positive photoresist (III): a selection principle of phenolic compounds for novolac resins", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20102
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Cited by 7 scholarly publications.
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KEYWORDS
Photoresist materials

Image processing

Image acquisition

Photoresist developing

Picture Archiving and Communication System

Semiconducting wafers

Carbon

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