1 June 1990 Optimization of resist composition for the DESIRE process
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Abstract
The quality of resist profiles obtained In surface Imaging techniques based on selective diffusion of a silylating agent and subsequent dry development depends on the sificon distribution after silylatlon and the quality of the transfer of this silicon image during dry development. Ideally, the silicon distribution at the pattern edge should show a very abrupt change from low to high silicon incorporation. This so called "silicon contrast" depends upon the composition of the resist materials and the silylatlon conditions. In this paper, we will describe the effect of resist parameters such as sensitiser type and concentration, resin type, molecular weight, molecular weight distribution and hydroxyl group content of the resin on the lithographic characteristics of the resist materials In the DESIRE process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno Roland, Bruno Roland, Ria Lombaerts, Ria Lombaerts, Jan Vandendriessche, Jan Vandendriessche, Francoise Godts, Francoise Godts, } "Optimization of resist composition for the DESIRE process", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20098; https://doi.org/10.1117/12.20098
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