1 June 1990 Reduction of lateral swelling and incoporation of DESIRE in MOS processing
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Abstract
The DESIRE1,2 process is based on selective silylation and subsequent dry development. A problem with silylation of resists is the volume expansion3 of the resist image, which results in pattern deformation and displacement of small features near large structures, also referred to as proximity effect. This lateral swel1ing45 should be reduced before implementation of DESIRE in ULSI processes. The effect of processing conditions, exposure wavelength, polymer composition and type of silylating agent on this swelling phenomenon have been studied and several solutions for reducing the swelling are proposed. Both thermal and UV induced crosslinking have been found to be a major contributor for elimination of the swelling. During silylation the silylating agent diffuses into the resist and reacts with the hydroxyl groups of the polymer. Swelling was reduced by lowering the concentration of these hydroxyl groups and by making use of different silylating agents with a smaller ballast group on the Si. The DESIRE process was implemented in a 0.5 xm gatelength NMOS process, in order to examine its compatibility with MOS processing, especially dry etch characteristics. 0.5 jim transistors have been succesfully made.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anne-Marie Goethals, Anne-Marie Goethals, David N. Nichols, David N. Nichols, Maaike Op de Beeck, Maaike Op de Beeck, P. De Geyter, P. De Geyter, Ki-Ho Baik, Ki-Ho Baik, Luc Van den Hove, Luc Van den Hove, Bruno Roland, Bruno Roland, Ria Lombaerts, Ria Lombaerts, } "Reduction of lateral swelling and incoporation of DESIRE in MOS processing", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20116; https://doi.org/10.1117/12.20116
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