1 June 1990 Sensitivity enhancers for chemically amplified resists
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Abstract
The addition of phenolic compounds to positive tone chemically amplified resists has increased sensitivity by approximately 2X for Deep UV exposures and up to 5Xfor X-ray imaging. Sensitivity enhancement during e-heam exposures was only 20%. Additives like hydroquinone sensitize various acid generators including triphenyl sulfonium triflate (TPS) and N-tosyloxyphthalimide (PTS) without affecting contrast and image profiles. The sensitization occurs in poly(t-butyloxycarbonyloxystyrene) as well as in base soluble resins. With PTS, the predominant mechanism is believed to involve electron transfer from the excited singlet or triplet state of the additive to the acid generator. For onium salt, direct photolysis plays a significant role in acid generation so that the effect of the additives is not as great as with PTS.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Brunsvold, Ranee W. Kwong, Warren Montgomery, Wayne M. Moreau, Harbans S. Sachdev, Kevin M. Welsh, "Sensitivity enhancers for chemically amplified resists", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20084; https://doi.org/10.1117/12.20084
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