1 June 1990 Silicon diffusion characteristics of different surface-imaging resists
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This paper describes a study of the silylation characteristics of different resists that are suitable for single-layer, surface-imaging patterning applications. In particular, the effect of different process parameters on the silicon diffusion in UCB's Plasmask®resist is discussed. The diffusion profile of silicon in the resist is decorated by a staining technique followed by SEM analysis. This allows for two-dimensional resolution of the diffusion profiles and the observation of other process attributes. Links are established among exposure, silylation and etch by observing silylated profiles. It is shown that the silylation profile characteristics are dominated by the resist image created during exposure. Also, the effects of post-exposure bake and silylating agent temperature are presented. Diffusion profiles for MacDermid's PR1024 are also shown.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George R. Misium, Monte A. Douglas, Cesar M. Garza, Charles B. Dobson, "Silicon diffusion characteristics of different surface-imaging resists", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20091; https://doi.org/10.1117/12.20091


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