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1 June 1990 Silylation processes for 193-nm excimer laser lithography
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Abstract
A silylation process for novolac-based resins was developed which results in positive-tone imaging. This process is based on 193nminduced crosslinking followed by a low temperature silylation step. Novolac resin without diazoquinone additives may also be used as positive-tone resists. Typical conditions were exposure to dimethylsilyldimethylainine vapor at 10 Torr for 1 minute at 100 °C. This incorporates silicon in the upperniost 100 to 1000 nn of the film, depending on the resist. Etch selectivities in a 10 rnTorr oxygen reactive ion etching plasma with a bias voltage of -200 V were typically 30:1. Resolution below 0.3 m has been demonstrated with this technique.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark A. Hartney, Roderick R. Kunz, Daniel J. Ehrlich, and David C. Shaver "Silylation processes for 193-nm excimer laser lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20119
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