1 June 1990 Submicron imaging at 248.3 nm: a lithographic performance review of an advanced negative resist
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Abstract
This paper reviews the initial lithographic performance of the Megaposit® SNR 248-1.0 Photo Resist during the imaging of 0.35, 0.40, 0.45, 0.50 and 0.55km line/space pairs on a 0.42NA/0.5 coherence/KrF stepper. The test results show that process window overlap can be maintained to a normalized geometry size of 0.59 ki for line/space pairs. This degree of overlap is shown to be comparable to a normalized value of 0.76 k 1 during the simultaneous imaging of line/space pairs, isolated lines and isolated spaces. This result appears to be consistent with the g-line results published prcviously1 . It is also shown that at the exposure dose required to size the target geometry, the resist induced bias due to lateral development is negligible and provides the possibility to extend the working resolution to smaller geometries if the intensity minimum of the aerial image can be suppressed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John S. Petersen, Wei Lee, "Submicron imaging at 248.3 nm: a lithographic performance review of an advanced negative resist", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20127; https://doi.org/10.1117/12.20127
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