1 June 1990 Systematic investigation of the photoresponse and dissolution characteristics of an acid-hardening resist
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Abstract
Acid hardening resists (AHR) which rely on chemical amplification schemes for increased photospeed arefinding wide acceptance as a viable approach to deep UV lithography. The understanding of the underlying acid-catalyzed chemistry and the processing protocol necessary to exploit the advantages of these resists is a subject of active interest in several laboratories. The thermal response of acid-hardening resists has been quantified in a lumped parameter model proposed in an earlier study [ 1]. In the current paper, we report on recent results obtained with a commercial AHR. We have investigated the processing latitude and the resist profile sensitivity as a function of postexposure bake and development conditions under normalized dose conditions predicted by our model. The mean free path of the acid has been estimated to ?e less than 70 A. The resist-induced linewidth bias has been correlated to the conjugate point of the aerial image over a wide range of processing conditions. Since acid diffusion is restricted by theformation of a crosslinked ne'tWork, the ability to manipulate the latent image as measured by the isofocal region of the resist has been investigated. This assumes importance in cases where the process needs to be optimized to obtain a desired bias. Since the exposure and development conditions are not as strongly coupled in acid hardening resists, the potential exists to optimize the development process independently and suitable parameters have been defined for this step.
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Siddhartha Das, James W. Thackeray, Masayuki Endo, Joseph C. Langston, Henry T. Gaw, "Systematic investigation of the photoresponse and dissolution characteristics of an acid-hardening resist", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20088; https://doi.org/10.1117/12.20088
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