1 June 1990 Very thin multicomponent resists prepared by Langmuir-Blodgett techniques
Author Affiliations +
Abstract
Langmuir-Blodgett (LB) techniques can be used to prepare very thin organic films, and we have investigated their use in lithographic applications. Resist films were prepared usmg novolac and poly(p-hydroxystyrene) resins and both near and deep UV sensitive photoactive compounds (PAC). LB resist films formed from mixtures of polymer and PAC behaved lithographically in a similar fashion to spin cast films. LB films as thin as 300 A were sufficient to protect 500 A of chromium during wet chemical etching. Initial attempts to use LB films as the top layer in a bilayer resist system indicated that silylation of the LB films may yield etch rate ratios of up to 10: 1 vs hard baked novolac. Investigation of the "sphere of influence" of PAC molecules by controlling their distribution throughout the film indicates that strong interactions may exist between consecutive LB layers of PAC. LB films may also be useful for modifying the surface concentration of PAC.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laura L. Kosbar, Curtis W. Frank, Roger Fabian W. Pease, "Very thin multicomponent resists prepared by Langmuir-Blodgett techniques", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20132; https://doi.org/10.1117/12.20132
PROCEEDINGS
8 PAGES


SHARE
Back to Top