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1 May 1990 Control of optical and mechanical properties of polycrystalline silicon membranes for x-ray masks
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We report improvements in optical and mechanical properties of x-ray lithography masks based on polycrystalline Si membranes. The optical transmittance of polycrystalline Si was increased to match that of single crystalline Si in 0.6 to 0.9 spectral range. This was accomplished by modifying deposition temperature and gas composition during LPCVD film growth. The new films are intrinsically tensile, allowing formation of taut membranes on crystalline Si substrates and on glass disks that are matched in thermal expansion to Si, in contrast to earlier polysilicon films which required thermal expansion mismatch. The mechanical integrity of the masks was further improved by direct deposition of Si on thick machined glass disks, thus eliminating bonding of thin substrates to rigid support rings. The monolithic mask blanks are considerably more flat than the bonded structures, either single- or polycrystalline.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lee E. Trimble, George K. Celler, and John Frackoviak "Control of optical and mechanical properties of polycrystalline silicon membranes for x-ray masks", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990);


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