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1 May 1990 Focused ion-beam-assisted deposition of tungsten
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Abstract
Formation of fine conductive layer patterns by focused ion beam ( FIB ) using tungsten hexacarbonyl [W(CO)6] has been carried out to study its deposition mechanism. The effects of beam current density on the deposition rate, using a chamber-type gas delivery system and a nozzle-type system has been investigated and compared. It is found that the amount of dependence of deposition yield on current density differs between the two systems. In addition, the difference in gas pressures of the two systems cause different compositions of the deposits.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuichi Madokoro, Tsuyoshi Ohnishi, and Tohru Ishitani "Focused ion-beam-assisted deposition of tungsten", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20174
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