Metrology for gold absorber/silicon membrane x-ray reticles

Bernard J. Dardzinski; Robert Allen Grant; Daniel D. Ball

doi:10.1117/12.20171

1 May 1990 Metrology for gold absorber/silicon membrane x-ray reticles

Bernard J. Dardzinski, Robert Allen Grant, Daniel D. Ball

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20171
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

SEM metrology is used to characterizecritical dimension (CD)controlandprocess bias in x-ray reticle fabrication. The pattern transfer bias between the single layer resist stencil and'the electroplated absorber is investigated. This bias includes the resist sidewall angle, the accuracy of the SEM edge detection algorithm, and the wet chemical etchants used to delineate the absorberpattern. It is a well known fact that the resist geometry plays an importantrole in producing the final absorber structure. Thispaperexplores theeffects ofresistprofilesand subsequentprocessing steps on critical dimension control of the absorber layer.

Citation Download Citation

Bernard J. Dardzinski, Robert Allen Grant, and Daniel D. Ball "Metrology for gold absorber/silicon membrane x-ray reticles", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20171

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