Model for focused ion beam deposition

James P. Levin; Patricia G. Blauner; Alfred Wagner

doi:10.1117/12.20140

1 May 1990 Model for focused ion beam deposition

James P. Levin, Patricia G. Blauner, Alfred Wagner

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20140
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

A model of focused ion beam deposition of materials is described. Decomposition of organometallic molecules by ion beams 50-300 nm in diameter allow localized deposition of a variety of metals. The large current density (approximately I A/cm2) and the inherent sputtering of a focused ion beam can result in no net deposition for a variety of process conditions. The major process parameters of current density, beam dwell time, and readsorption time are introduced. Experimental examples of gold depositions from dimethylgold hexafluoro acetylacetonate or DMG(hfac) are presented to illustrate the effect of the process parameters on size and shape of the depositions.

Citation Download Citation

James P. Levin, Patricia G. Blauner, and Alfred Wagner "Model for focused ion beam deposition", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20140

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