1 May 1990 Modeling of thermal stresses and distortions in x-ray masks employing the embedded absorber structure
Author Affiliations +
The distortions that arise from thermal stresses in X-ray masks which employ the embedded absorber structure are modelled and analyzed. By using a quasi two-dimensional model, both in-plane and out-of-plane distortions were characterized and their dependence on the fractional absorber coverage was calculated. These distortions were found to be large when the absorber was initially deposited at a high temperature; however they can be greatly reduced by adding a buffer layer between the absorber and membrane. The Young's modulus and the linear expansion coefficient of this buffer layer are chosen such that the mask distortions are compensated for. Without the buffer layer, the shear and peeling stresses at the absorber-membrane interface were found to increase exponentially with distance near the absorber edges and may cause fatigue. These results were found in agreement with computer simulations.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadim I. Maluf, Nadim I. Maluf, Stephen Y. Chou, Stephen Y. Chou, Roger Fabian W. Pease, Roger Fabian W. Pease, } "Modeling of thermal stresses and distortions in x-ray masks employing the embedded absorber structure", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20162; https://doi.org/10.1117/12.20162


X-Ray Lithography For Integrated Circuits - A Review
Proceedings of SPIE (August 07 1977)
Submicron X-Ray Replication Technology For Early Application
Proceedings of SPIE (November 06 1983)
Mask technologies for deep x-ray LIGA
Proceedings of SPIE (May 27 2003)
SOR Lithography in West Germany
Proceedings of SPIE (July 31 1989)
Evaluation of a laser-based proximity x-ray stepper
Proceedings of SPIE (July 08 1992)

Back to Top