1 May 1990 PRIME process: an alternative to multiple layer resist systems and high accelerating voltage for e-beam lithography
Author Affiliations +
Abstract
A new positive working system for e-beam lithography, called PRIME (Positive Resist IMage by dry Etching) is proposed. High contrast (about 6) and resolution 75 nm L/S in O.351um thick resist are achieved. Very steep profiles can be obtai- ned on thick resist even at low accelerating voltage as O.2pm hole in l.2pm thick resist at 20 keV. To be able to quantify both intra and inter proximity effect on positive tone resist specific two layers electric tests chips were designed. Then PRIME process has been compared, in terms of proximity effects magnitude, at 20kV and 50 kV, to RAY-PF resist show- ing clearly advantages over such three components novolac ba- sed positive resist.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Serge V. Tedesco, Serge V. Tedesco, Christophe Pierrat, Christophe Pierrat, Francoise Vinet, Francoise Vinet, Brigitte Florin, Brigitte Florin, Michel Lerme, Michel Lerme, Jean Charles Guibert, Jean Charles Guibert, } "PRIME process: an alternative to multiple layer resist systems and high accelerating voltage for e-beam lithography", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20168; https://doi.org/10.1117/12.20168
PROCEEDINGS
15 PAGES


SHARE
Back to Top