System-9: a new positive tone novalac-based high-resolution electron-beam resist

Asanga H. Perera; J. Peter Krusius

doi:10.1117/12.20169

1 May 1990 System-9: a new positive tone novalac-based high-resolution electron-beam resist

Asanga H. Perera, J. Peter Krusius

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20169
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The performance of a new positive tone novalac-based resist, SYSTEM-9, has been characterized on a Cambridge Instruments EBMF-1O.5 electron beam lithography tool. Resist characteristics and the optimum processing conditions for a variety of commercially available developers have been investigated. This resist yields relative contrasts of up to 14, sensitivities from 19 to 32 (jtC/cm2) and a good resolution of 0.2 jim. SYSTEM-9 has excellent dry etch resistance. Outstanding applications in submicron micro-electronic device fabrication are demonstrated.

Citation Download Citation

Asanga H. Perera and J. Peter Krusius "System-9: a new positive tone novalac-based high-resolution electron-beam resist", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20169

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