0.10-um overlay for DRAM production using step and scan

Harry Sewell; Scott J. Smith; Daniel N. Galburt

doi:10.1117/12.20193

1 June 1990 0.10-μm overlay for DRAM production using step and scan

Harry Sewell, Scott J. Smith, Daniel N. Galburt

Proceedings Volume 1264, Optical/Laser Microlithography III; (1990) https://doi.org/10.1117/12.20193
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The resolution capabilities of lithographic tools are being progressively pushed to allow the replication of increasingly smaller lithographic features1'2 The target for 0.5-micron resolution is almost past; 0.4-micron resolution is of keen interest; and the goal of 0.35 micron is just around the corner. The overlay requirements using the familiar rule of thumb of Overlay = Resolution I 4 indicates that a 0.10-micron (mean plus 3 sigma) specification is required for 0.40-micron resolution tools. This is not an easy task. We will explore it in the context of a Step-and-Scan' alignment system.

Citation Download Citation

Harry Sewell, Scott J. Smith, and Daniel N. Galburt "0.10-μm overlay for DRAM production using step and scan", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20193

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