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1 June 1990 0.5-μm optical mask process for 364-nm scanned laser lithography
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The implementation of a 0. 60 NA 20X objective lens in a new high resolution mask lithography tool utilizing 364 nm scanned laser lithography provides the opportunity to investigate an optical alternative to e-beam lithography for mask manufacturing with minimum line widths of 0. 5 micrometer. The near i-line illumination of this system allows the use of commercially available i-line resists developed for i-line wafer steppers. A number of these i-line resists are evaluated for use in 364 nm scanned laser mask lithography. The characteristics of routine one-step dry-to-dry processing for masks with 0. 5 micrometer minimum line widths are shown including exposure focus and development latitude. Several wet etchants are evaluated for use with 0. 5 micrometer mask processing. The consequences of zero bias (tape CD to mask CD) processing and the resolution limitations of wet etching for masks are discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter D. Buck "0.5-μm optical mask process for 364-nm scanned laser lithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990);

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