1 June 1990 0.5-μm photolithography using high-numerical-aperture I-line wafer steppers
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Results are presented from a new high numerical aperture (NA 0. 48) iline 5X reduction lens which resolves 0. 5 micron lines and spaces over greater than 1 micron depth of focus in several commercially available i-line resists. The performance of this lens is contrasted with that of a NA 0. 40 i-line lens. The NA 0. 40 lens has better depth of focus for 0. 7 microns lines and spaces (L/S) and larger while the NA 0. 48 lens has better depth of focus for L/S smaller than 0. 7 microns down to a resolution cutoff near 0. 35 micron L/S. Other characteristics of the lens such as its relative insensitivity to absorption heating effects and its behavior as a function of the overpressure of He gas within the lens are explored. Simulation work suggests that a NA of between 0. 5 and 0. 55 is optimum for printing 0. 5 micron L/S. Further it suggests that there may be sufficient depth of focus at 0. 4 micron L/S to make i-line a competitor to DUV lithography for the 64 Mbit DRAM generation. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William H. Arnold, William H. Arnold, Anna Maria Minvielle, Anna Maria Minvielle, Khoi A. Phan, Khoi A. Phan, Bhanwar Singh, Bhanwar Singh, Michael K. Templeton, Michael K. Templeton, } "0.5-μm photolithography using high-numerical-aperture I-line wafer steppers", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20184; https://doi.org/10.1117/12.20184


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