1 June 1990 Deep-ultraviolet lithography for 500-nm devices
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Each DRAM design generation has required higher reoiution imaging and overlay capability. The 500-nm lithographic ground rules of a 16-Mb chip make deep-UV (DUV) an attractive alternative to,thc more stanth,rd mid-UV (MUV) photolithography presently practiced for less demanding technologies. The shorter wavelength permits an unproved depth of focus by allowing the same resolution at smaller numerical apertures. This approach retains the simplicity of single-layer-resist processing rather th a ii forcing conversion to m ultilayer imaging.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven J. Holmes, Steven J. Holmes, Ruth Levy, Ruth Levy, Albert S. Bergendahl, Albert S. Bergendahl, Karey L. Holland, Karey L. Holland, John G. Maltabes, John G. Maltabes, Stephen E. Knight, Stephen E. Knight, Katherine C. Norris, Katherine C. Norris, Denis Poley, Denis Poley, } "Deep-ultraviolet lithography for 500-nm devices", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20180; https://doi.org/10.1117/12.20180

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