1 June 1990 Evaluating pattern transfer lenses for deep-UV laser-induced processes
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Pattern transfer for deep-UV laser induced chemical processes for IC fabrication requires projection systems which include as active optical components not only the projection lens itself but in addition the window of the process chamber and the process gas volume. A measurement technique has been developed which allows the direct observation of the aerial image formed by such a projection system avoiding the necessity of resist exposure and development. In this paper we describe the test and measurement apparatus as well as modifications made to the laser light source which become necessary when using the system for single shot exposures. Initial results show that the system is capable ofresolving 0. 5 pm lines and spaces in the image plane. Pictures are presented which show the influence that defocussing has on the edge acuity of an imaged test structure. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerhard Solaro, Gerhard Solaro, Erich Keckeis, Erich Keckeis, Friedrich G. Bachmann, Friedrich G. Bachmann, } "Evaluating pattern transfer lenses for deep-UV laser-induced processes", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20201; https://doi.org/10.1117/12.20201


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