1 June 1990 Evaluation of resists using ArF excimer laser projection lithography
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Abstract
In order to study the feasibility of ArF excimer laser lithography, we developed the projection system installing a refractive 5X reduction lens. We investigated a pattern fabrication by using several resists and this ArF excimer exposure system. Quarter-micron patterns have been fabricated by using newly developed ArF excimer laser projection system with refractive-projection lenses of monochromatic-spherical and monochromatic-aspherical type. Speckle-free line and space patterns below 0.25 micron with excellent quality have been obtained by aspherical lens. In conclusion, ArF excimer laser lithography has been confirmed as an effective technology to fabricate quarter micron patterns. Furthermore, ArF excimer laser lithography is feasible using a modified KrF excimer laser lithography system. However, ArF excimer laser lithography needs a suitable resist material. And also, we study about fundamental resist materials for ArF excimer laser lithography.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaru Sasago, Yoshiyuki Tani, Masayuki Endo, Noboru Nomura, "Evaluation of resists using ArF excimer laser projection lithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20202; https://doi.org/10.1117/12.20202
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