1 June 1990 Heterodyne holographic nanometer alignment for a half-micron wafer stepper
Author Affiliations +
Proceedings Volume 1264, Optical/Laser Microlithography III; (1990); doi: 10.1117/12.20190
Event: Microlithography '90, 1990, San Jose, CA, United States
Heterodyne Holographic Nanometer Alignment system has been applied in a halfmicron wafer stepperfor mass production usage to achieve the overlay accuracy within 0. 1 micron. Resultant overlay accuracy was successfully obtained within 63nm/3sigma for die by die alignment sequence and 8Onm/3sigma for multisampling global alignment sequence. A throughput of 50 6inch wafers per one hour was achieved for multi global alignment sequence. Alignment error budget was estimated for this alignment system and it was confirmed that total overlay accuracy of all processed wafers within 0. 1 micron for halfmicron photolithography was realized using Heterodyne Holographic Nanometer Alignmnent method. In addition onaxis TTR (Through The Reticle) alignment system was investigated for a future subhalf micron wafer stepper and the resul tant overlay accuracy was improved to be 55nm/3sigma. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuhiro Yamashita, Noboru Nomura, Keiji Kubo, Yuichirou Yamada, Masaki Suzuki, "Heterodyne holographic nanometer alignment for a half-micron wafer stepper", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20190; https://doi.org/10.1117/12.20190

Optical alignment

Semiconducting wafers

Overlay metrology


Wafer-level optics


Optical lithography


Application Specific Wafer Stepper
Proceedings of SPIE (January 01 1987)
Improvements in 0.5-micron production wafer steppers
Proceedings of SPIE (July 01 1991)
A New Step By Step Aligner For Very Large Scale...
Proceedings of SPIE (September 05 1980)
Step and scan: the maturing technology
Proceedings of SPIE (May 26 1995)

Back to Top