1 June 1990 Heterodyne holographic nanometer alignment for a half-micron wafer stepper
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Heterodyne Holographic Nanometer Alignment system has been applied in a halfmicron wafer stepperfor mass production usage to achieve the overlay accuracy within 0. 1 micron. Resultant overlay accuracy was successfully obtained within 63nm/3sigma for die by die alignment sequence and 8Onm/3sigma for multisampling global alignment sequence. A throughput of 50 6inch wafers per one hour was achieved for multi global alignment sequence. Alignment error budget was estimated for this alignment system and it was confirmed that total overlay accuracy of all processed wafers within 0. 1 micron for halfmicron photolithography was realized using Heterodyne Holographic Nanometer Alignmnent method. In addition onaxis TTR (Through The Reticle) alignment system was investigated for a future subhalf micron wafer stepper and the resul tant overlay accuracy was improved to be 55nm/3sigma. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuhiro Yamashita, Kazuhiro Yamashita, Noboru Nomura, Noboru Nomura, Keiji Kubo, Keiji Kubo, Yuichirou Yamada, Yuichirou Yamada, Masaki Suzuki, Masaki Suzuki, } "Heterodyne holographic nanometer alignment for a half-micron wafer stepper", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20190; https://doi.org/10.1117/12.20190


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